INRUSH CURRENT LIMITATION BY UTILIZATION OF LINEAR MODE OF IGBT TRANSISTOR

Kaspars Kroičs, Rodions Saltanovs

Abstract


Input filter is essential part of each switched mode power supply design. Important issue that must be solved in the design process is control of the high inrush current due to rapid rise of the voltage during initial connection of the power to the power supply. In the paper a single IGBT or MOSFET transistor is applied to control dv/dt in order to limit the high current spikes during initial power turn on or to limit overcurrent in microarc oxidation process. This inrush current limiting technique is beneficial because dv/dt control reduces the electromagnetic interference due to current and voltage spikes. As inrush current limiting device has minimal parts count the design is cost effective and reliable.

Keywords


microarc oxidation process; IGBT driver; inrush current limiting

Full Text:

PDF

References


Michael Raspotnig “Power supplies with significantly reduced inrush current” [Online]. Available: http://www.pulspower.com/pdf/an30.01_en.pdf. [Accessed: 10-Mar-2016].

EPCOS “NTC thermistors for inrush current limiting, leaded and coated disks” [Online]. Available: http://en.tdk.eu/inf/50/db/icl_13/B57237_S237.pdf. [Accessed: 10-Mar-2016].

Seshadri Seetharaman “Fundamentals of Metallurgy” [Online]. Available: http://steelcast.ru/d/80122/d/fundamentals_of_metallurgy.pdf. [Accessed: 08-Mar-2016].

S. Huang and L. Zhou, “Structure and properties of ceramic coating on Al alloy by plasma microarc oxidation,” in 2010 International Conference on Mechanic Automation and Control Engineering (MACE), 2010, pp. 3195–3198.

Суминов И.В., Эпельфельд А.В., Людин В.Б., Крит Б.Л., Борисов А.М. Микродуговое оксидирование (теория, технология, оборудование). М.:ЭКОМЕТ, 2005. 368 с.

Гордиенко П.С. Электрохимическое формирование покрытий на алюминии и его сплавах при потенциалах искрения и пробоя. Владивосток, Дальнаука, 1999 –232с.

Казанцев И.А., Кривенков А.О. Технология получения композиционных материалов микродуговым оксидированием: монография / И.А. Казанцев, А.О. Кривенков. – Пенза: Информационно-издательский центр ПГУ, 2007.–240 с.

Abdus Sattar “Insulated Gate Bipolar Transistor (IGBT) Basics” [Online]. Available: http://www.ixys.com/documents/appnotes/ixys_igbt_basic_i.pdf. [Accessed: 10-Mar-2016].

A. Volke and M. Hornkamp, IGBT Modules - Technologies, Driver and Application, 1st ed. Infineon Technologies AG, Munich, 2011.

C. Licitra, S. Musumeci, A. Raciti, A. U. Galluzzo, R. Letor, and M. Melito, “A new driving circuit for IGBT devices,” IEEE Trans. Power Electron., vol. 10, no. 3, pp. 373–378, May 1995.

C. S. Mitter “Active inrush current limiting using MOSFETs” [Online]. Available: http://www.bonavolta.ch/hobby/files/MotorolaAN1542.pdf. [Accessed: 10-Mar-2016].

Infineon “Datasheet FF200R17KE4” [Online]. Available: http://www.infineon.com/dgdl/Infineon-FF200R17KE4-DS-v02_02-en_de.pdf?fileId=db3a3043293a15c401293a9dbf5e0018. [Accessed: 08-Mar-2016].




DOI: http://dx.doi.org/10.17770/het2016.20.3544

Refbacks

  • There are currently no refbacks.